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APTM100UM45FAG
Single Switch MOSFET Power Module
SK S D
VDSS = 1000V RDSon = 45m typ @ Tj = 25C ID = 215A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM100UM45FAG - Rev 2
Max ratings 1000 215 160 860 30 52 5000 30 50 3200
Unit V A V m W A
July, 2006
APTM100UM45FAG
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V
45 3
Max 600 3 52 5 600
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 215A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 215A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5
Min
Typ 42.7 7.6 1.3 1602 204 1038 18 14 140 55 7.2 4.3 12 5.8
Max
Unit nF
nC
ns
mJ mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 215A IS = - 215A VR = 670V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 12 36
Max 215 160 1.3 18 310 625
Unit A V V/ns ns C
July, 2006 2-6 APTM100UM45FAG - Rev 2
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 215A di/dt 700A/s VR VDSS Tj 150C
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APTM100UM45FAG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.025 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM100UM45FAG - Rev 2
July, 2006
APTM100UM45FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 540 480 I D, Drain Current (A) 420 360 300 240 180 120 60 0 0 5 10 15 20 25
5.5V 5V 6V VGS =15, 10V
Transfert Characteristics 720 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V
600 480 360 240 120 0
TJ=25C TJ=125C
T J=-55C
30
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 107.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 240 210 180 150 120 90 60 30 0 25 50 75 100 125 150
July, 2006 4-6 APTM100UM45FAG - Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
120
240
360
480
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100UM45FAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage Ciss Coss VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 350 700 1050 1400 1750 2100
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=107.5A
1000
limited by R DSon 100s
100
1ms
10
Single pulse TJ=150C TC=25C 1
10ms
1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=215A TJ=25C
VDS=200V VDS=500V VDS=800V
10000
Crss 1000
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5-6
APTM100UM45FAG - Rev 2
APTM100UM45FAG
Delay Times vs Current 150 td(on) and td(off) (ns) 120 90 60 30 0 80 120 160 200 240 280 320 360 400 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =0.5 T J=125C L=100H
Rise and Fall times vs Current 100
VDS=670V RG=0.5 T J=125C L=100H
t d(off)
tf
80
tr and tf (ns)
60 40 tr 20 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy vs Gate Resistance
td(on)
24 Switching Energy (mJ) Switching Energy (mJ) 20 16 12 8 4 0 80 120 160 200 240 280 320 360 400
ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=670V RG=0.5 TJ=125C L=100H
Eon
36 30 24 18 12 6 0 0
VDS=670V ID=215A T J=125C L=100H
Eoff
Eoff
Eon Eoff
1
2
3
4
5
6
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 Frequency (kHz) 200 150 100 50 0 20 50 80 110 140 170 ID, Drain Current (A) 200
VDS=670V D=50% RG=0.5 T J=125C T C=75C ZCS ZVS
IDR, Reverse Drain Current (A)
300
1000
T J=150C
100
T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM100UM45FAG - Rev 2

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